| PART |
Description |
Maker |
| G7151-16 G7150 G7150-16 |
InGaAs PIN photodiode array
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
|
HAMAMATSU[Hamamatsu Corporation]
|
| OPR2101 |
Six Element Photodiode Array in
|
OPTEK[OPTEK Technologies]
|
| OPR2100 |
Six Element SMD Photodiode Array
|
OPTEK[OPTEK Technologies]
|
| CE-1750A |
464 Element Senseman Silicon Photodiode Array
|
Centronic
|
| S4204 S8703 |
Si PIN photodiode Dual-element, plastic package photodiode
|
Hamamatsu Corporation
|
| LCDA12C-8.T LCDA12C-8.TB LCDA12C-8.TBT LCDA15C-8.T |
500 W, UNIDIRECTIONAL, 16 ELEMENT, SILICON, TVS DIODE, MS-012AC
Low Capacitance TVS Diode Array For Multi-mode Transceiver Protection
|
Semtech Corporation
|
| AA16-9DIL18 |
Avalanche Photodiode Array
|
HY ELECTRONIC CORP.
|
| G7150-16 |
InGaAs PIN photodiode array
|
Hamamatsu Photonics
|
| S8866-6411 |
Photodiode array combined with signal processing IC
|
Hamamatsu Corporation
|
| PDB-C216 |
Blue Enhanced Linear Array Silicon Photodiode
|
List of Unclassifed Manufacturers
|
| S8865-128G S8865-64G S8866-128G-02 S8865-256G S886 |
Photodiode array combined with signal processing IC for X-ray detection
|
Hamamatsu Corporation
|
